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39Journal of the Korean Physical Society.
Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions, Journal of the Korean Physical Society 7.1.2 Quantum wells and superlattices based on CdTe and its alloys, Growth and Structuring Electrical and Optical Properties of Tellurium-Doped Gallium Antimonbde Grown by MOVPE, Heterostructure Epitaxy and Devices Synthesis and spectral study of trisubstituted organosilanes containing silicon-tellurium bonds, Bulletin of the Academy of Sciences of the USSR, Division of chemical science Laser multiphoton mass spectroscopy of organometallic compounds: State selective and mass resolved detection of neutral fragment tellurium atoms from C2H5TeC2H5, Applied Physics B Doping andp-n junction formation in InAs1-xSbx/lnSb SLSu2019s by MOCVD, Journal of Electronic Materials Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy, Journal of Electronic Materials OMVPE growth of CdTe on InSb substrates, Journal of Electronic Materials Improved CdTe layers on GaAs and Si using atomic layer epitaxy, Journal of Electronic Materials Growth kinetics and properties of heteroepitaxial (Cd,Zn)Te films prepared by metalorganic molecular beam epitaxy, Journal of Electronic Materials